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N and P Channel 40V MOSFET of JY13M
General Descriptions:
The JY13M is the N and P Channel logic enhancement mode power field transistors Which can provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features:
| Device | VBR(DSS) | RDS(ON) MAX TJ=25ºC | Package |
| N-Channel | 40V | <30mΩ@VGS=10V,ID=12A | TO252-4L |
| <40mΩ@VGS=4.5V,ID=8A | |||
| P-Channel | -40V | <45mΩ@VGS=-10V,ID=-12A | |
| <66mΩ@VGS=-4.5V,ID=-8A |
►Low input capacitance
►Fast switching speed
Pin Configuration:
Absolute Max Ratings(Ta=25℃ Unless Otherwise Noted)
| Parameter | Symbol | N Channel | P Channel | Unit | |
| Drain Source Voltage | VDSS | 40 | -40 | V | |
| Gate Source Voltage | VDSS | ±20 | ±20 | ||
| Continuous Drain Current | Ta=25ºC | ID | 12 | -12 | A |
| Ta=100ºC | 12 | -12 | |||
| Pulsed Drain Current | IDM | 30 | -30 | ||
| Maximum Power Dissipation | Ta=25ºC | PD | 2 | W | |
| Ta=70ºC | 1.3 | ||||
| Junction and Storage Temperature Range | TJ TSTG | -55 to 150 | ºC | ||
| Thermal Resistance Junction to Ambient | RθJA | 10s | 25 | ºC/W | |
| Steady | 60 | ||||
| Thermal Resistance Junction to Case | RθJC | 5.5 | 5 | ºC/W |
Electrical Characteristics (Ta=25℃ Unless Otherwise Noted)
TO252-4L Package Outline: