Changzhou Junqi International Trade Co.,Ltd
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General Descriptions:
The JY12M is the N and P Channel logic enhancement mode power field transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features:
| Device | RDS(ON)MAX | IDMAX(25℃) |
| N-Channel | 20mΩ@VGS=10V | 8.5A |
| 32mΩ@VGS=4.5V | 7.0A | |
| P-Channel | 45mΩ@VGS=-10V | -5.5A |
| 85mΩ@VGS=-4.5V | -4.1A |
*Low Input Capacitance
*Fast Switching Speed
Applications:
● Power Management
● DC/DC Converter
● DC Motor Control
● LCD TV & Monitor Display Inverter
● CCFL inverter
PIN Configuration:
Absolute Maximum Ratings( Ta=25℃ Unless Otherwise Noted):
| Parameter | Symbol | N Channel | P Channel | Unit | |||
| 10sec | Steady | 10 sec | Steady | ||||
| Drain Source Voltage | VDSS | 30 | -30 | V | |||
| Gate Source Voltage | VDSS | ±20 | ±20 | ||||
| Continuous Drain Current | Ta=25℃ | ID | 8.5 | 6.5 | -7.0 | -5.3 | A |
| Ta=70℃ | 6.8 | 5.1 | -5.5 | -4.1 | |||
| Pulsed Drain Current | IDM | 30 | -30 | ||||
| Maximum Power Dissipation | Ta=25℃ | PD | 1.5 | W | |||
| Ta=70℃ | 0.95 | ||||||
| Operating Junction Tempearture | TJ | -55~150 | ℃ | ||||
| Thermal Resistance Junction to Ambient | RΘJA | 61 | 100 | 62 | 103 | ℃/W | |
| Thermal Resistance Junction to Case | RΘJC | 15 | 15 | ℃/W | |||
SOP-8 Package Outline:
| Dim | Millimeters | |
| Min | Max | |
| A | 1.35 | 1.75 |
| A1 | 0.10 | 0.25 |
| B | 0.35 | 0.49 |
| C | 0.18 | 0.25 |
| D | 4.80 | 5.00 |
| E | 3.80 | 4.00 |
| e | 1.27BSC | |
| H | 5.80 | 6.20 |
| h | 0.25 | 0.50 |
| L | 0.40 | 1.25 |
| Θ | 0° | 7° |
For more production information, please contact with us via email: ivanzhu@junqitradinig.com